Selected Publications
Books and Chapters:
1. L. Wang, K.-W. Ang, "Two-dimensional materials toward future photovoltaic devices". Book title: 2D Materials for Photonic and Optoelectronic Applications. Elsevier, 2020.
2. W. C. Tan, X. Huang, L. Huang, L. Wang, X. Feng, L. Chen, and K.-W. Ang, "Recent advances in black phosphorus and transition metal dichalcogenide-based electronic and optoelectronic devices". Book title: 2D Semiconductor Materials and Devices, Elsevier, 2020.
Journal Publication：(* denotes corresponding author, # denotes co-first author):
1. L. Wang, X. Wang, Y. Zhang, R. Li, T. Ma, K. Leng, Z. Chen, I. Abdelwahab, and K. P. Loh*, " Exploring ferroelectric switching in α-In2Se3 for neuromorphic computing". Advanced Functional Materials, 30, 2004609, 2020.
2. K. Leng#, L. Wang#, Y. Shao, I. Abdelwahab, G. Grinblat, I. Verzhbitskiy, R. Li, Y. Cai, X. Chi, W. Fu, P. Song, A. Rusydi, G. Eda, S. A. Maier, and K. P. Loh*, "Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface". Nature Communications, 11, 5483, 2020.
3. L. Chen#, L. Wang#, Y. Peng, X. Feng, S. Sarkar, S. Li, B. Li, L. Liu, K. Han, X. Gong, J. Chen, Y. Liu, G. Han, and K.-W. Ang*, "A van der Waals synaptic transistor based on ferroelectric HfZrO and two-dimensional tungsten disulfide". Advanced Electronic Materials, 6, 2000057, 2020.
4. L. Wang#, W. Liao#, S. L. Wong, Z. G. Yu, S. Li, Y.-F. Lim, X. Feng, W. C. Tan, X. Huang, L. Chen, L. Liu, J. Chen, X. Gong, C. Zhu, X. Liu, Y.-W. Zhang*, D. Chi*, and K.-W. Ang*, "Artificial synapses based on multi-terminal memtransistors for neuromorphic application". Advanced Functional Materials, 29, 1901106, 2019. (ESI highly cited paper)
5. L. Wang#, W. Liao#, S. Xu, X. Gong, C. Zhu, and K.-W. Ang*, "Unipolar n-type conduction in black phosphorus induced by atomic layer deposited MgO". IEEE Electron Device Letters, 40, 471, 2019. (Most popular article of 03/2019)
6. L. Wang#, L. Chen#, S. L. Wong, X. Huang, W. Liao, C. Zhu, Y.-F. Lim, D. Li, X. Liu*, D. Chi*, and K.-W. Ang*, "Electronic devices and circuits based on wafer-scale polycrystalline monolayer MoS2 by chemical vapor deposition". Advanced Electronic Materials, 5, 1900393, 2019. (Front Cover)
7. L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, X. Huang, and K.-W. Ang*, "2D Photovoltaic Devices: Progress and Prospects". Small Methods, 2, 1700294, 2018. (Invited)
8. L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, and K.-W. Ang*, "Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black-Phosphorus Heterojunction Diode". Advanced Electronic Materials, 4, 1700442, 2018.
9. L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, and K.-W. Ang*, "Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics". Nanoscale, 10, 14359, 2018.
10. W. Liao#, L. Wang#, L. Chen, W. Wei, Z. Zeng, X. Feng, L. Huang, W. C. Tan, X. Huang, K.-W. Ang*, and C. Zhu*, "Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits". Nanoscale, 10, 17007, 2018.
11. L. Wang*, C. Sartel, S, Hassani, V. Sallet, and G. Brémond, "Resolving ZnO-based coaxial core-multishell heterostructure by electrical scanning probe microscopy". Applied Physics Letters, 113, 222103, 2018.
12. L. Wang*, B. Gautier, A. Sabac, and G. Brémond, "Investigation of tip-depletion-induced fail in scanning capacitance microscopy for the determination of carrier type". Ultramicroscopy, 174, 46, 2017.
13. L. Wang*, J. M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C. Sartel, and G. Brémond, "Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy". Applied Physics Letters, 108, 132103, 2016.
14. L. Wang*, V. Sallet, C. Sartel, and G. Brémond, "Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy". Applied Physics Letters, 109, 092101, 2016.
15. L. Wang*, S. Guillemin, J. M. Chauveau, V. Sallet, F. Jomard, R. Brenier, V. Consonni, and G. Brémond, "Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy". Phys. Status Solidi C, 13, 576, 2016.
16. L. Wang*, J. Laurent, J. M. Chauveau, V. Sallet, F. Jomard, and G. Brémond, "Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy". Applied Physics Letters, 107, 192101, 2015.
